ILPI-135A semiconductor emitter
The ILPI-135A pulsed semiconductor laser emitter has the MOCVD AlGaAs/GaAs laser diode array, the case and the cover with a glass window. The device is designed to be used as an emission source in illuminators, rangefinders and medical systems.
Specifications (at T=25 °C and the radiator area of 100 cm2)
| Name of parameter | Min | Nominal | Max |
|---|---|---|---|
| Laser wavelength, nm | 840 | 850 | 870 |
| Average pulsed laser power, W | 120 | 140 | |
| Pulse amplitude of pump current, A | 40 | 50 | |
| Pulse width of pump current (FWHM), ns | 40 | 100 | 150 |
| Operating voltage, V | 60 | ||
| Pulse repetition rate, Hz | 10,000 | 20,000 | |
| Emitting area, mm | 0.36 x 0.5 | ||
| Laser divergence, grad: | |||
| in the plane parallel to p-n transition | 10 | ||
| in the plane perpendicular to p-n transition | 25 | ||
| Spectral line width (FWHM), nm | 3 | ||
| Misalignment of emitting area and case, mm | 0,5 |
Reference parameters
- A power is measured in the cone with a vertex of angle no less than 74°
- The temperature shift of a laser wavelength is no more than 0.3 nm/°C
- The operating temperature of the case is minus 55...+70 °C
- The minimum life time is 109 pulses
- The specific value of a pump current is pointed in the certificate or the label
