43DL-527 semiconductor laser module
The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03) is designed for operation in the composition of hermetically sealed equipment.
The long side of the emitting area of the semiconductor laser module is parallel to the long side of the contact plate 2.
Technical data
The parameters of emission and the electrical parameters for acceptance and delivery under normal climatic conditions according to the GOST 20.57.406-81 are shown in the table.
| Name of parameter | Norm of spec, no less than | Norm of spec, no more than |
|---|---|---|
| Laser wavelength, nm | 1540 | 1560 |
| Laser pulsed power, W | 100 | 110 |
| Pulse width (FWHM), ns | 90 | 110 |
| Pulse repetition rate of pump current, kHz | 5 | 5 |
| Weight of emitter, g | 5 | |
| Size of emitting area, mm | 1 х 1 | |
| Limiting laser average pulsed power under normal climatic conditions, W | 110...115 | 110...115 |
| Laser average pulsed power under all conditions of operation, W | 90 |
Characteristics under the action of mechanical and climatic factors
The semiconductor laser module is resistant to the action of mechanical and climatic factors determined by the GOST RV 20.39.414.1-97 for the group of version 1U with the additions and the corrections.
| Name and characteristics of external action | Value |
|---|---|
| Sinusoidal vibration: | |
| frequency range, Hz | 10...500 |
| peak shock acceleration, m/s2 (g) | 49 (5) |
| Акустический шум: | |
| frequency range, Hz | 50...10,000 |
| sound pressure level, dB | 130 |
| Mechanical single shock: | |
| peak shock acceleration, m/s2 (g) | 980 (100) |
| shock acceleration duration, ms | 1...5 |
| number of single shocks for each axis | 20 |
| Mechanical multiple shock: | |
| peak shock acceleration, m/s2 (g) | 245 (25) |
| shock acceleration duration, ms | 5...15 |
| number of single shocks for each axis | 1000 |
| High ambient temperature: | |
| operating, °С | 40 |
| limiting, °С | 50 |
| Change of ambient temperature: | |
| temperature range, °С | from -50 to 50 |
| number of cycles | 3 |
| cycle duration, h | 1 |
The semiconductor laser module is to be resistant to the action of special factors 7.И1, 7.И6, 7.И7 corresponding to the group 1УC GOST RV.20.39.414.2–98. The requirements of resistance to action of the special factors 7.И with the other characteristics as well as action of the factors 7.С и 7.К are not shown.
The gamma-percentile failure time of the semiconductor laser module at g=90% in the composition of hermetically sealed equipment in the modes and under the conditions permissible by the ZHGDK.433755.060-03 TU is no less than 1010 pulses within the life time of 20 years.
