ILPI-137A semiconductor emitter
The ILPI-137A pulsed semiconductor laser emitter has the MOCVD AlGaAs/GaAs laser diode array, the case and the cover with a glass window. The device is designed to be used as an emission source in illuminators, rangefinders and medical systems.
Specifications (at T=25 °C and the radiator area of 100 cm2)
| Name of parameter | Min | Nominal | Max |
|---|---|---|---|
| Laser wavelength, nm | 840 | 860 | 880 |
| Average pulsed laser power, W | 500 | 600 | |
| Pulse amplitude of pump current, A | 65 | 85 | |
| Pulse width of pump current (FWHM), ns | 70 | 100 | 120 |
| Operating voltage, V | 95 | ||
| Pulse repetition rate, Hz | 5,000 | 10,000 | |
| Emitting area, mm | 1.3 x 1.4 | ||
| Laser divergence, grad: | |||
| in the plane parallel to p-n transition | 12 | ||
| in the plane perpendicular to p-n transition | 30 | ||
| Spectral line width (FWHM), nm | 5 |
Reference parameters
- A power is measured in the cone with a vertex of angle no less than 74°
- The temperature shift of laser wavelength is no more than 0.3 nm/°C
- The operating temperature of the case is minus 50...+50 °C
- The minimum life time is 109 pulses
- The specific value of a pump current is pointed in the certificate or the label
